Evaluating InAs QD Lasers for Space Borne Applications

被引：0
作者：
O'Driscoll, I. [1 ]
Blood, P. [1 ]
Sobiesierski, A. [1 ]
Gwilliam, R. [2 ]
Smowton, P. M. [1 ]
机构：
[1] Cardiff Univ, Sch Phys & Astron, Queens Bldg, Cardiff CF24 3AA, S Glam, Wales
[2] Univ Surrey, Adv Technol Inst, FEPS, Guildford GU2 7XH, Surrey, England
来源：
2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | 2012年
关键词：
PROTON IRRADIATION; QUANTUM DOTS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Decrease of photoluminescence with increasing dose is due to bombardment induced wetting layer non-radiative recombination. To exploit the relative radiation immunity of QD lasers one should maximise the QD density and capture probability per dot.
引用
收藏
页码：94 / +
页数：2
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