X-ray and photoluminescence characterization of a strain-free GaAs-on-Si structure formed by annealing under ultrahigh pressure

被引：3

作者：

Jimbo, T

Ishiwara, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 3B期

关键词：

GaAs-on-Si; ultrahigh pressure; residual strain; strain-free; X-ray diffraction analysis; photoluminescence;

D O I：

10.1143/JJAP.36.L327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Characteristics of strain-free GaAs-on-Si structures formed by annealing under ultrahigh pressure were investigated by X-ray diffraction (XRD) analysis and photoluminescence (PL) measurement. It was found that a strain-free GaAs film was formed on a Si substrate without serious degradation of the optical and crystallographical properties of the film. It was also found that no additional strain or defects were generated during PL measurement at 77 K. Next, the strain-free GaAs-on-Si structure was reannealed at atmospheric pressure, and variation of the strain was investigated. It was found in this experiment that the strain in the GaAs him increased rapidly in the first 5 min of reannealing but within 20 to 30 min it reached to a constant value which was determined by the reannealing temperature. Finally, both XRD and PL data were compared and an intensity result on the depth distribution of strain in a GaAs film was derived.

引用

页码：L327 / L329

页数：3

共 6 条

[1] PHOTOLUMINESCENCE STUDY OF GAAS GROWN DIRECTLY ON SI SUBSTRATES [J].

ENATSU, M ;

SHIMIZU, M ;

MIZUKI, T ;

SUGAWARA, K ;

SAKURAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (09) :L1468-L1471

[2] EPITAXIAL-GROWTH OF STRAIN-FREE GE FILMS ON SI SUBSTRATES BY SOLID-PHASE EPITAXY AT ULTRAHIGH PRESSURE [J].

ISHIWARA, H ;

SATO, T ;

SAWAOKA, A .

APPLIED PHYSICS LETTERS, 1992, 61 (16) :1951-1953

[3] LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS UNDER ULTRAHIGH PRESSURE [J].

ISHIWARA, H ;

WAKABAYASHI, H ;

MIYAZAKI, K ;

FUKAO, K ;

SAWAOKA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B) :308-311

[4] FORMATION OF STRAIN-FREE GAAS-ON-SI STRUCTURES BY ANNEALING UNDER ULTRAHIGH PRESSURE [J].

ISHIWARA, H ;

HOSHINO, T ;

KATAHAMA, H .

MATERIALS CHEMISTRY AND PHYSICS, 1995, 40 (04) :225-229

[5] CRYSTALLINE QUALITY OF STRAIN-FREE GAAS-ON-SI STRUCTURES FORMED BY ANNEALING UNDER ULTRAHIGH PRESSURE [J].

ISHIWARA, H ;

HOSHINO, T ;

KATAHAMA, H .

APPLIED PHYSICS LETTERS, 1995, 66 (18) :2373-2375

[6]

ISHIWARA H, 1992, MATER RES SOC SYMP P, V239, P467

← 1 →