Prediction of high efficiency ZnMgO/Si solar cells suppressing carrier recombination by conduction band engineering

被引：44

作者：

Knutsen, K. E. ^{[1
]}

Schifano, R. ^{[1
]}

Marstein, E. S. ^{[1
,2
]}

Svensson, B. G. ^{[1
]}

Kuznetsov, A. Yu ^{[1
]}

机构：

[1] Univ Oslo, Dept Phys, Ctr Mat Sci & Nanotechnol, N-0318 Oslo, Norway

[2] Inst Energy Technol IFE, Dept Solar Energy, N-2027 Kjeller, Norway

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2013年 / 210卷 / 03期

关键词：

band offsets; heterojunctions; silicon; solar cells; ZnMgO; ZNO; OFFSET;

D O I：

10.1002/pssa.201228527

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A significant conduction band offset appearing in n-ZnO/p-Si heterojunction solar cells is recognized as a serious roadblock to obtain high efficiency solar cells. By alloying with Mg, the conduction band in Zn1xMgxO can be raised above that of Si, so that the influence of recombination centers at the interface between the two materials is strongly reduced, enabling high efficiency despite recombination velocities as high as 106cms1. By simulating these phenomena we predict an optimal design of a n-Zn0.8Mg0.2O/p-Si solar cell resulting in high conversion efficiencies.

引用

收藏

页码：585 / 588

页数：4

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