Fabrication and Characterization of Half-kerfed LiNbO3-based High-frequency (>100MHz) Ultrasonic Array Transducers

被引：3
作者：
Zhang, J. Y. [1 ,2 ,3 ]
Xu, W. J. [1 ]
Carlier, J. [1 ]
Ji, X. M. [2 ,3 ]
Nongaillard, B. [1 ]
Queste, S. [4 ]
Zhou, J. [2 ,3 ]
Huang, Y. P. [2 ,3 ]
机构：
[1] Univ Valenciennes, UMR 8520, CNRS, Dept Optoacoustoelect,IEMN, Mt Houy BP311, F-59313 Valenciennes, France
[2] Fudan Univ, Dept Microelect, Syst State Key Lab, Shanghai 200433, Peoples R China
[3] ASIC, Shanghai 200433, Peoples R China
[4] Univ Franche Comte, CNRS, Inst FEMTO ST, UMR 6174, F-25044 Besancon, France
来源：
2011 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS) | 2011年
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/ULTSYM.2011.0431
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of kerf depth is investigated on the performances of array transducers. A finite element tool, COMSOL, is employed to simulate the properties of acoustic field and to calculate the electrical properties of the arrays, including crosstalk effect and electrical impedance. Furthermore, Inductively Coupled Plasma (ICP) deep etching process is used to etch 36 degrees/Y-cut lithium niobate (LiNbO3) crystals and the limitation of etching aspect ratio is studied. Several arrays with different profiles are realized under optimized processes. At last, arrays with different pitches are fabricated and characterized by a network analyzer.
引用
收藏
页码：1727 / 1730
页数：4
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