Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for SiO2-Based Structure

被引：17
作者：
Chen, Yu-Ting [1 ]
Chang, Ting-Chang [1 ,2 ,3 ,4 ]
Yang, Po-Chun [1 ]
Huang, Jheng-Jie [2 ,3 ]
Tseng, Hsueh-Chih [2 ,3 ,5 ]
Huang, Hui-Chun
Yang, Jyun-Bao [1 ]
Chu, Ann-Kuo [1 ]
Gan, Der-Shin [5 ]
Tsai, Ming-Jinn [6 ]
Sze, Simon M. [2 ,3 ,7 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 804, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan
[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[5] Natl Sun Yat Sen Univ, Dept Mat Sci & Engn, Kaohsiung 804, Taiwan
[6] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 310, Taiwan
[7] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期
关键词：
Forming; high temperature; nonvolatile memory; resistance switch; SiO2;
D O I：
10.1109/LED.2012.2232276
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
After high-temperature forming (HTF) and room-temperature forming treatments, the resistive switching behavior gets some improvements. The switching ratio is enhanced as the device undergoes the HTF process. Through the conduction mechanism analyses in the high-resistance state, Schottky emission and Frenkel-Poole emission are fitted. In addition, after HTF treatment, the resistance of conductive filament decreases. The different high-resistance-state characteristics in the two devices can be attributed to more oxygen ions generated by the serious damage during HTF. Finally, the switching behavior activated by low-temperature forming process is employed to confirm the model.
引用
收藏
页码：226 / 228
页数：3
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