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Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature
被引:35
作者:

Farrell, L.
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h-index: 0
机构:
Univ Dublin, Sch Phys, Trinity Coll, Dublin 2, Ireland
Univ Dublin, CRANN, Trinity Coll, Dublin 2, Ireland Univ Dublin, Sch Phys, Trinity Coll, Dublin 2, Ireland

Norton, E.
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h-index: 0
机构:
Univ Dublin, Sch Phys, Trinity Coll, Dublin 2, Ireland
Univ Dublin, CRANN, Trinity Coll, Dublin 2, Ireland Univ Dublin, Sch Phys, Trinity Coll, Dublin 2, Ireland

O'Dowd, B. J.
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h-index: 0
机构:
Univ Dublin, Sch Phys, Trinity Coll, Dublin 2, Ireland
Univ Dublin, CRANN, Trinity Coll, Dublin 2, Ireland Univ Dublin, Sch Phys, Trinity Coll, Dublin 2, Ireland

Caffrey, D.
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h-index: 0
机构:
Univ Dublin, Sch Phys, Trinity Coll, Dublin 2, Ireland
Univ Dublin, CRANN, Trinity Coll, Dublin 2, Ireland
Univ Dublin, Trinity Coll, Adv Mat Bioengn Res Ctr AMBER, Dublin 2, Ireland Univ Dublin, Sch Phys, Trinity Coll, Dublin 2, Ireland

Shvets, I. V.
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h-index: 0
机构:
Univ Dublin, Sch Phys, Trinity Coll, Dublin 2, Ireland
Univ Dublin, CRANN, Trinity Coll, Dublin 2, Ireland Univ Dublin, Sch Phys, Trinity Coll, Dublin 2, Ireland

Fleischer, K.
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h-index: 0
机构:
Univ Dublin, Sch Phys, Trinity Coll, Dublin 2, Ireland
Univ Dublin, CRANN, Trinity Coll, Dublin 2, Ireland Univ Dublin, Sch Phys, Trinity Coll, Dublin 2, Ireland
机构:
[1] Univ Dublin, Sch Phys, Trinity Coll, Dublin 2, Ireland
[2] Univ Dublin, CRANN, Trinity Coll, Dublin 2, Ireland
[3] Univ Dublin, Trinity Coll, Adv Mat Bioengn Res Ctr AMBER, Dublin 2, Ireland
基金:
爱尔兰科学基金会;
关键词:
THIN-FILMS;
OXIDE SEMICONDUCTOR;
CUCRO2;
FILMS;
NICKEL-OXIDE;
CU;
PERFORMANCE;
FABRICATION;
D O I:
10.1063/1.4927241
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
In this letter, we demonstrate a low temperature (approximate to 345 degrees C) growth method for Cu deficient CuCrO2 performed by spray pyrolysis using metal-organic precursors and a simple air blast nozzle. Smooth films were grown on glass substrates with a highest conductivity of 12 S/cm. The most conductive samples retain transparencies above 55% resulting in a figure of merit as high as 350 mu S, which is the best performing p-type transparent conducting material grown by solution methods to date. Remarkably, despite the nano-crystallinity of the films, properties comparable with crystalline CuCrO2 are observed. No postannealing of the films is required in contrast to previous reports on crystalline material. The low processing temperature of this method means that the material can be deposited on flexible substrates. As this is a solution based technique, it is more attractive to industry as physical vapour deposition methods are slow and costly in comparison. (C) 2015 AIP Publishing LLC.
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