Inducing an Incipient Terahertz Finite Plasmonic Crystal in Coupled Two Dimensional Plasmonic Cavities

被引：55

作者：

Dyer, G. C. ^{[1
]}

Aizin, G. R. ^{[2
]}

Preu, S. ^{[3
,4
]}

Vinh, N. Q. ^{[3
]}

Allen, S. J. ^{[3
]}

Reno, J. L. ^{[1
]}

Shaner, E. A. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] CUNY, Kingsborough Coll, Brooklyn, NY 11235 USA

[3] UC Santa Barbara, Inst Terahertz Sci & Technol, Santa Barbara, CA 93106 USA

[4] UC Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 12期

关键词：

FIELD-EFFECT TRANSISTOR; ELECTRON-GAS; SUSPENDED GRAPHENE; INVERSION-LAYERS; RADIATION; EMISSION; CONDUCTIVITY; OSCILLATIONS; SUPERLATTICE; ABSORPTION;

D O I：

10.1103/PhysRevLett.109.126803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We measured a change in the current transport of an antenna-coupled, multigate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the electrons in the two dimensional electron channel. The observed terahertz absorption spectrum indicates coherence between plasmons excited under adjacent biased device gates. The experimental results agree quantitatively with a theoretical model we developed that is based on a generalized plasmonic transmission line formalism and describes an evolution of the plasmonic spectrum with increasing electron density modulation from homogeneous to the crystal limit. These results demonstrate an electronically induced and dynamically tunable plasmonic band structure.

引用

页数：5

共 40 条

[1] OBSERVATION OF 2-DIMENSIONAL PLASMON IN SILICON INVERSION LAYERS [J].