Arrayed CdTeMicrodots and Their Enhanced Photodetectivity via Piezo-Phototronic Effect

被引:8
作者
Lee, Dong Jin [1 ]
Kumar, G. Mohan [2 ]
Ilanchezhiyan, P. [2 ]
Xiao, Fu [2 ]
Yuldashev, Sh U. [2 ]
Woo, Yong Deuk [3 ]
Kim, Deuk Young [1 ]
Kang, Tae Won [2 ]
机构
[1] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 04623, South Korea
[2] Dongguk Univ Seoul, NITA, Seoul 04623, South Korea
[3] Woosuk Univ, Dept Mech & Automot Engn, Chonbuk 55338, South Korea
基金
新加坡国家研究基金会;
关键词
CdTe microdots; Schottky barrier; photodetector; piezo-phototronic effect; UV PHOTODETECTOR; CDTE; NANOSTRUCTURES; GROWTH; ZNTE;
D O I
10.3390/nano9020178
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this paper, a photodetector based on arrayed CdTe microdots was fabricated on Bi coated transparent conducting indium tin oxide (ITO)/glass substrates. Current-voltage characteristics of these photodetectors revealed an ultrahigh sensitivity under stress (in the form of force through press) while compared to normal condition. The devices exhibited excellent photosensing properties with photoinduced current increasing from 20 to 76 mu A cm(-2) under stress. Furthermore, the photoresponsivity of the devices also increased under stress from 3.2 x 10(-4) A/W to 5.5 x 10(-3) A/W at a bias of 5 V. The observed characteristics are attributed to the piezopotential induced change in Schottky barrier height, which actually results from the piezo-phototronic effect. The obtained results also demonstrate the feasibility in realization of a facile and promising CdTe microdots-based photodetector via piezo-phototronic effect.
引用
收藏
页数:13
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