Spin dependent tunneling

被引:23
作者
Levy, PM
Zhang, SF
机构
[1] NYU, Dept Phys, New York, NY 10003 USA
[2] Univ Missouri, Dept Phys, Rolla, MO 65409 USA
基金
美国国家科学基金会;
关键词
D O I
10.1016/S1359-0286(99)00008-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magnetotransport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random access memories. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:223 / 229
页数:7
相关论文
共 66 条
[21]   Spin-dependent tunneling through layered ferromagnetic nanoparticles [J].
Inomata, K ;
Saito, Y .
APPLIED PHYSICS LETTERS, 1998, 73 (08) :1143-1145
[22]   Numerical study of magnetoresistance in ferromagnetic tunnel junctions [J].
Itoh, H ;
Kumazaki, T ;
Inoue, J ;
Maekawa, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (10) :5554-5559
[23]  
ITOH H, 1998, IN PRESS J MAG SOC J, V23
[24]   TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].
JULLIERE, M .
PHYSICS LETTERS A, 1975, 54 (03) :225-226
[25]   CrO2:: A self-doped double exchange ferromagnet [J].
Korotin, MA ;
Anisimov, VI ;
Khomskii, DI ;
Sawatzky, GA .
PHYSICAL REVIEW LETTERS, 1998, 80 (19) :4305-4308
[26]   Temperature dependence of the spin tunneling magnetoresistive effect on NiFe/Co/Al2O3/Co/NiFe/FeMn junctions [J].
Kumagai, S ;
Tezuka, N ;
Miyazaki, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11B) :L1498-L1500
[27]   Bias voltage and temperature dependence of magnetotunneling effect [J].
Lu, Y ;
Li, XW ;
Xiao, G ;
Altman, RA ;
Gallagher, WJ ;
Marley, A ;
Roche, K ;
Parkin, S .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6515-6517
[28]   Temperature dependence of itinerant electron junction magnetoresistance [J].
MacDonald, AH ;
Jungwirth, T ;
Kasner, M .
PHYSICAL REVIEW LETTERS, 1998, 81 (03) :705-708
[29]   Validity of the Julliere model of spin-dependent tunneling [J].
MacLaren, JM ;
Zhang, XG ;
Butler, WH .
PHYSICAL REVIEW B, 1997, 56 (18) :11827-11832
[30]   Spin-dependent tunneling in epitaxial systems: Band dependence of conductance [J].
MacLaren, JM ;
Butler, WH ;
Zhang, XG .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6521-6523