Spin dependent tunneling

被引：23
作者：
Levy, PM
Zhang, SF
机构：
[1] NYU, Dept Phys, New York, NY 10003 USA
[2] Univ Missouri, Dept Phys, Rolla, MO 65409 USA
来源：
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 1999年 / 4卷 / 02期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/S1359-0286(99)00008-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magnetotransport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random access memories. (C) 1999 Elsevier Science Ltd. All rights reserved.
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页码：223 / 229
页数：7
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