Pulsed laser deposition of layers and nanostructures based on cadmium telluride and bismuth

Using the pulsed laser deposition (PLD) technique CdTe layers were obtained on various Substrates from the target of compound material, as well as by sequential deposition from single sources of Cd and Te. Electron diffraction analyses have shown that layers deposited from single targets on InSb, KBr substrates crystallize in Usual Cubic zinc-blende structure of CdTe at the growth temperature of similar to 150 degrees C, i.e. significantly lower than in other traditional techniques-MBE, MOCVD, PVD. Layers deposited from CdTe compound target on mica substrates crystallize with hexagonal wurtzite structure; and the sing] e-crystal line growth of layers is observed at 300 degrees C. It was established that significant decrease (down to 170 degrees C) in mnonocrystalline growth temperature for CdTe can be achieved in this case by deposition of initial submonolayer bismuth on mica substrate; the subsequent CdTe layer crystallizes in wurtzite structure with the plane lattice parameter close to that of the bismuth (4.546 angstrom). Lattice-matched multilayer structures CdTe-Bi-CdTe-were fabricated based on this technique. The observed peculiarities of dependence of layer Structure on the intensity of evaporating laser and substrate temperature is related to the energy state of laser-ablated material plasma and its influence on orienting properties of substrate surface.