Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k.p method\

被引：9

作者：

Chen, Baile ^{[1
]}

Holmes, A. L., Jr. ^{[1
]}

Khalfin, Viktor ^{[2
]}

Kudryashov, Igor ^{[2
]}

Onat, Bora. M. ^{[2
]}

机构：

[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

[2] Princeton Lightwave Inc, Cranbury, NJ 08512 USA

来源：

LASER TECHNOLOGY FOR DEFENSE AND SECURITY VIII | 2012年 / 8381卷

关键词：

k.p method; Type-II Quantum Well; Laser diode; Mid-infrared; optical gain;

D O I：

10.1117/12.918764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Different type-II InGaAs/GaAsSb quantum well design structures on InP substrate for mid-infrared emission has been modeled by six band k . p method. The dispersion relations, optical matrix element, optical gain and spontaneous emission rate are calculated. The effects of the parameters of quantum wells (thickness, composition) and properties of cladding layers were investigated. For injected carrier concentration of 5x10(12) cm(-2), peak gain values around 2.6-2.7 mu m wavelengths of the order of 1000 cm(-1) can be achieved, which shows that type-II InGaAs/GaAsSb quantum wells are suitable for infrared laser operation beyond 2 mu m at room temperature.

引用

页数：7

共 8 条

[1]

Bohm G., 2007, CRYST GROWTH, V301, P941

[2] MODELING OF STRAINED-QUANTUM-WELL LASERS WITH SPIN-ORBIT-COUPLING [J].

CHANG, CS ;

CHUANG, SL .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :218-229

[3] Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes [J].

Chen, Baile ;

Jiang, W. Y. ;

Holmes, A. L., Jr. .

OPTICAL AND QUANTUM ELECTRONICS, 2012, 44 (3-5) :103-109

[4] Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy [J].

Hu, J ;

Xu, XG ;

Stotz, JAH ;

Watkins, SP ;

Curzon, AE ;

Thewalt, MLW ;

Matine, N ;

Bolognesi, CR .

APPLIED PHYSICS LETTERS, 1998, 73 (19) :2799-2801

[5] Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission [J].

Huang, J. Y. T. ;

Mawst, L. J. ;

Kuech, T. F. ;

Song, X. ;

Babcock, S. E. ;

Kim, C. S. ;

Vurgaftman, I. ;

Meyer, J. R. ;

Holmes, A. L., Jr. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (02)

[6] The HITRAN 2004 molecular spectroscopic database [J].

Rothman, LS ;

Jacquemart, D ;

Barbe, A ;

Benner, DC ;

Birk, M ;

Brown, LR ;

Carleer, MR ;

Chackerian, C ;

Chance, K ;

Coudert, LH ;

Dana, V ;

Devi, VM ;

Flaud, JM ;

Gamache, RR ;

Goldman, A ;

Hartmann, JM ;

Jucks, KW ;

Maki, AG ;

Mandin, JY ;

Massie, ST ;

Orphal, J ;

Perrin, A ;

Rinsland, CP ;

Smith, MAH ;

Tennyson, J ;

Tolchenov, RN ;

Toth, RA ;

Vander Auwera, J ;

Varanasi, P ;

Wagner, G .

JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER, 2005, 96 (02) :139-204

[7] Intervalley carrier transfer in short-wavelength InP-based quantum-cascade laser [J].

Semtsiv, M. P. ;

Wienold, M. ;

Dressler, S. ;

Masselink, W. T. ;

Fedorov, G. ;

Smirnov, D. .

APPLIED PHYSICS LETTERS, 2008, 93 (07)

[8] Band parameters for III-V compound semiconductors and their alloys [J].

Vurgaftman, I ;

Meyer, JR ;

Ram-Mohan, LR .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :5815-5875

← 1 →