High-efficiency continuous-wave operation of blue-green laser diodes based on nonpolar m-plane gallium nitride

被引：48

作者：

Okamoto, Kuniyoshi ^{[1
]}

Tanaka, Taketoshi ^{[1
]}

Kubota, Masashi ^{[1
]}

机构：

[1] ROHM Co Ltd, Res & Dev Headquarters, Kyoto 6158585, Japan

来源：

APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 07期

关键词：

D O I：

10.1143/APEX.1.072201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated nonpolar m-plane GaN-based blue-green laser diodes (LDs) under continuous-wave (cw) operation with a lasing wavelength of 481 nm. A maximum output power of more than 20 mW was achieved, for which the threshold current and the corresponding threshold current density (J(th)) were 61 mA and 6.1 kA/cm(2), respectively. The value Of Jth and the electroluminescence peak wavelength shift until lasing did not change with lasing wavelength in the range from 459 to 481 nm, though the reflectivities of the cavity facets were fixed for each LD. In addition, the slope efficiency increased with increasing lasing wavelength, from 0.37W/A at 459nm to 0.49W/A at 481 nm. This is the remarkable advantages of nonpolar GaN-based material compared to c-plane material for the realization of green LDs. (C) 2008 The Japan Society of Applied Physics.

引用

页码：0722011 / 0722013

页数：3

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