Floating-body and self-heating effects characterization of poly-Si TFTs through AC output conductance measurement

被引：0

作者：

Takatori, K. ^{[1
]}

Asada, H. ^{[1
]}

Kaneko, S. ^{[1
]}

机构：

[1] NEC LCD Technol Ltd, Kanagawa 2118666, Japan

来源：

IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The AC output conductance of poly-Si TFT is measured in the frequency domain. The increase of the conductance related to the floating-body effect (FBE) is observed in the higher drain bias region. The FBE is suppressed with increase of frequency. The increase of the conductance caused by the suppression of self-heating effect (SHE) is observed in the frequency regions over 0.1[MHz]. Although the changes caused by FBE are bias-dependent, those caused by SHE are bias-independent. Longer channel width shows larger frequency dependency and it's related to SHE.

引用

页码：1659 / 1662

页数：4

共 23 条

[21] Study of degradation phenomenon due to a combination of contamination and self-heating in poly-Si thin film transistors fabricated by a low-temperature process
Inoue, S., 1600, Japan Society of Applied Physics (42):
[22] Study of self-heating in si nano structure for floating body-surround gate transistor with high-k dielectric films
Endoh, Tetsuo
Tanaka, Kousuke
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (5B): : 3189 - 3192
[23] Experimental Study of Self-Heating Effect (SHE) in SOI MOSFETs: Accurate Understanding of Temperatures during AC Conductance Measurement, Proposals of 2ω Method and Modified Pulsed IV
Beppu, Nobuyasu
Oda, Shunri
Uchida, Ken
2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2012,

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