Floating-body and self-heating effects characterization of poly-Si TFTs through AC output conductance measurement

被引：0
|
作者：
Takatori, K. [1 ]
Asada, H. [1 ]
Kaneko, S. [1 ]
机构：
[1] NEC LCD Technol Ltd, Kanagawa 2118666, Japan
来源：
IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2006年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The AC output conductance of poly-Si TFT is measured in the frequency domain. The increase of the conductance related to the floating-body effect (FBE) is observed in the higher drain bias region. The FBE is suppressed with increase of frequency. The increase of the conductance caused by the suppression of self-heating effect (SHE) is observed in the frequency regions over 0.1[MHz]. Although the changes caused by FBE are bias-dependent, those caused by SHE are bias-independent. Longer channel width shows larger frequency dependency and it's related to SHE.
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页码：1659 / 1662
页数：4
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