Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic Applications

被引:195
作者
Cushen, Julia D. [3 ]
Otsuka, Issei [1 ,2 ]
Bates, Christopher M. [4 ]
Halila, Sami [1 ,2 ]
Fort, Sebastien [1 ,2 ]
Rochas, Cyrille [1 ,2 ]
Easley, Jeffrey A. [3 ]
Rausch, Erica L. [3 ]
Thio, Anthony [3 ]
Borsali, Redouane [1 ,2 ]
Willson, C. Grant [3 ,4 ]
Ellison, Christopher J. [3 ]
机构
[1] Ctr Rech Macromol Vegetales CERMAV, CNRS, UPR 5301, ICMG, F-38041 Grenoble 9, France
[2] Univ Grenoble 1, F-38041 Grenoble 9, France
[3] Univ Texas Austin, Dept Chem Engn, Austin, TX 78712 USA
[4] Univ Texas Austin, Dept Chem, Austin, TX 78712 USA
基金
美国国家科学基金会;
关键词
block copolymer; lithography; oligosaccharide; thin films; nanopatterning; poly(trimethylsilyl styrene); IMPRINT LITHOGRAPHY; ARRAYS; POLYSTYRENE; ORIENTATION; NANOSTRUCTURES; STEP;
D O I
10.1021/nn300459r
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Block copolymers demonstrate potential for use in next-generation lithography due to their ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The successful lithographic application of block copolymers relies on three critical conditions being met: high Flory-Huggins interaction parameters (chi), which enable formation of <10 nm features, etch selectivity between blocks for facile pattern transfer, and thin film self-assembly control. The present paper describes the synthesis and self-assembly of block copolymers composed of naturally derived oligosaccharides coupled to a silicon-containing polystyrene derivative synthesized by activators regenerated by electron transfer atom transfer radical polymerization. The block copolymers have a large chi and a low degree of polymerization (N) enabling formation of 5 nm feature diameters, incorporate silicon in one block for oxygen reactive ion etch contrast, and exhibit bulk and thin film self-assembly of hexagonally packed cylinders facilitated by a combination of spin coating and solvent annealing techniques. As observed by small angle X-ray scattering and atomic force microscopy, these materials exhibit some of the smallest block copolymer features in the bulk and in thin films reported to date.
引用
收藏
页码:3424 / 3433
页数:10
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