A pn heterojunction diode constructed with a n-type ZnO nanowire and a p-type HgTe nanoparticle thin film

被引：13
作者：
Seong, Hojun
Cho, Kyoungah
Kim, Sangsig [1 ]
机构：
[1] Korea Univ, Dept Elect Engn, Seoul 136713, South Korea
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期
关键词：
dark conductivity; elemental semiconductors; II-VI semiconductors; mercury compounds; nanoparticles; ohmic contacts; photoconductivity; p-n heterojunctions; semiconductor quantum wires; semiconductor thin films; silicon; wide band gap semiconductors; zinc compounds; PHOTOCURRENT;
D O I：
10.1063/1.3067861
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate a pn heterojunction diode constructed with a n-type ZnO nanowire (NW) and a p-type HgTe nanoparticle (NP) thin film on a SiO2/p-Si substrate. For the pn heterojunction diode, the rectifying characteristics of both the dark current and the photocurrent excited by 633 nm wavelength light were observed, but the photocurrent excited by 325 nm wavelength light possesses Ohmic characteristics. The optoelectronic characteristics of the pn heterojunction diode were compared with those of the ZnO NW and HgTe NP thin film composing it.
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页数：3
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