Thermoelectric and hot-electron properties of a silicon inversion layer (vol 56, pg 12422, 1997)

被引：5
|
作者：
Fletcher, R
Pudalov, VM
Feng, Y
Tsaousidou, M
Butcher, PN
机构：
来源：
PHYSICAL REVIEW B | 1999年 / 60卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.60.8392
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：8392 / 8392
页数：1
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