Thermoelectric and hot-electron properties of a silicon inversion layer (vol 56, pg 12422, 1997)

被引：5

|

作者：

Fletcher, R

Pudalov, VM

Feng, Y

Tsaousidou, M

Butcher, PN

机构：

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.60.8392

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：8392 / 8392

页数：1

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