Design and Analysis of different type of Charge Pump using CMOS Technology

被引:0
作者
Dadhich, Harshita [1 ]
Maurya, Vijendra [1 ]
Verina, Kumkum [2 ]
Jaiswal, Sanjay [2 ]
机构
[1] GITS Udaipur, Udaipur, Rajasthan, India
[2] Sangam Univ, Bhilwara, Rajasthan, India
来源
2016 INTERNATIONAL CONFERENCE ON ADVANCES IN COMPUTING, COMMUNICATIONS AND INFORMATICS (ICACCI) | 2016年
关键词
charge pump(CP); low power; DC to DC converter; EEPROM; CMOS technology;
D O I
暂无
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
Basically charge pump are used to produce a higher voltage than the power supply voltage. The charge pump is a DC to DC converter which uses capacitor as energy storage elements to produce a higher or lower voltage. This paper present a comparison between two of the most admired charge pump structures such as Dickson charge pump and Charge pump circuit with cross connected NMOS cells. The comparison has been carried out considering the output voltage, power consumption, delay, output current and conversion ratio. The discussion is supported by practical analysis of both the charge pump. The two charge pumps are taken with the input clock signal, power supply voltage, the same storage capacitance per stage, and the same number of stages. The object of this paper is to compare the all the parameter of the charge pump to found best charge pump. The comparison showed that the charge pump circuit with cross connected NMOS cells is best rather than Dickson charge pump. All simulation and result of Dickson charge pump and Charge pump circuit with cross connected AMOS cells is done at tanner tool 14.1.
引用
收藏
页码:294 / 298
页数:5
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