New self-organized growth method for InGaAs quantum dots on GaAs(001) using droplet epitaxy

被引：56

作者：

Mano, T

Watanabe, K

Tsukamoto, S

Fujioka, H

Oshima, M

Koguchi, N

机构：

[1] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan

[2] Univ Tokyo, Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[3] Sci Univ Tokyo, Dept Mat Sci & Technol, Chiba 2788510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 9AB期

关键词：

quantum dots; InGaAs; droplet epitaxy; photoluminescence; transmission electron microscope;

D O I：

10.1143/JJAP.38.L1009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum dot (QD) systems for InGaAs/GaAs without a wetting layer have been fabricated on GaAs (001) surfaces by a new self-organized growth method using droplet epitaxy with highly dense Ga droplets. Droplets of InGa alloy with highly dense Ga droplets have been formed by supplying 1) Ga, 2) In and 3) Ga molecular beams, sequentially. These highly dense Ga droplets have successfully prevented the two-dimensional growth of InGaAs during crystallization under As Bur supply. In the plan-view transmission electron microscope image, the InGaAs QDs with the density of 7 x 10(9) cm(-2) are observed. These QDs show a very sharp photoluminescence peak (full width half maximum (FWHM): 21.6 meV) at 946 nm.

引用

页码：L1009 / L1011

页数：3

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