Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques

被引：49

作者：

Johnston, K ^{[1
]}

Henry, MO

McCabe, D

McGlynn, E

Dietrich, M

Alves, E

Xia, M

机构：

[1] Dublin City Univ, Sch Phys Sci, Natl Ctr Plasma Sci & Technol, Dublin 9, Ireland

[2] CERN, PH Dept, CH-1211 Geneva 23, Switzerland

[3] Inst Technol & Nucl, P-2686953 Sacavem, Portugal

[4] Columbia Univ, Dept Phys, New York, NY 10027 USA

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.73.165212

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of photoluminescence measurements on ZnO implanted with stable and radioactive isotopes of Zn and Ga are presented. The donor-related exciton feature I-8 at 3.3600 eV is suggested to be due to bound exciton recombination at Ga donors. The I-1 line at 3.3718 eV is also likely to be due to Ga, and is attributed to ionized Ga donor bound exciton recombination. A feature at 3.3225 eV is observed following transmutation of radioactive Ga into stable Ge, and is attributed to Ge. Finally, a damage-related band is observed in the region of 1.8 eV when the recoil energy of the decay is capable of dislodging the host atoms from their respective lattice sites.

引用

页数：7

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