Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques

被引：49
|
作者：
Johnston, K [1 ]
Henry, MO
McCabe, D
McGlynn, E
Dietrich, M
Alves, E
Xia, M
机构：
[1] Dublin City Univ, Sch Phys Sci, Natl Ctr Plasma Sci & Technol, Dublin 9, Ireland
[2] CERN, PH Dept, CH-1211 Geneva 23, Switzerland
[3] Inst Technol & Nucl, P-2686953 Sacavem, Portugal
[4] Columbia Univ, Dept Phys, New York, NY 10027 USA
来源：
PHYSICAL REVIEW B | 2006年 / 73卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.73.165212
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The results of photoluminescence measurements on ZnO implanted with stable and radioactive isotopes of Zn and Ga are presented. The donor-related exciton feature I-8 at 3.3600 eV is suggested to be due to bound exciton recombination at Ga donors. The I-1 line at 3.3718 eV is also likely to be due to Ga, and is attributed to ionized Ga donor bound exciton recombination. A feature at 3.3225 eV is observed following transmutation of radioactive Ga into stable Ge, and is attributed to Ge. Finally, a damage-related band is observed in the region of 1.8 eV when the recoil energy of the decay is capable of dislodging the host atoms from their respective lattice sites.
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页数：7
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