Metal-replaced junction for reducing the junction parasitic resistance of a TFT

被引：7

作者：

Zhang, DL ^{[1
]}

Wong, M ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 04期

关键词：

aluminum (Al); metal-replaced junction (MERJ); parasitic resistance; thin-film transistor (TFT);

D O I：

10.1109/LED.2006.871180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film transistors (TFTs) with metal-replaced junctions (MERJs) have been fabricated and characterized. The junction parasitic resistance of a MERJ TFT is significantly reduced by partially replacing the semiconductor source and drain with a metal. The replacement process was executed at a low temperature of 400 degrees C with minimum added process complexity. Compared to a TFT with regular semiconductor source and drain junctions, a MERJ TFT was found to exhibit higher effective values of field-effect mobility and ON-state current.

引用

页码：269 / 271

页数：3

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