Design and fabrication of a high transmissivity metal-dielectric ultraviolet band-pass filter

被引:22
|
作者
Mu, Jianwei [1 ,2 ]
Lin, Pao-Tai [1 ,2 ]
Zhang, Lin [1 ,2 ]
Michel, Jurgen [1 ,2 ]
Kimerling, L. C. [1 ,2 ]
Jaworski, Frank [3 ]
Agarwal, Anu [1 ,2 ]
机构
[1] MIT, Microphoton Ctr, Cambridge, MA 02139 USA
[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[3] Raytheon Vis Syst, Goleta, CA 93117 USA
基金
加拿大自然科学与工程研究理事会;
关键词
OPTICAL-PROPERTIES; DETECTORS;
D O I
10.1063/1.4807925
中图分类号
O59 [应用物理学];
学科分类号
摘要
We introduce an efficient design approach for Ultraviolet (iUV) band-pass filter based on metal-dielectric stacks. We present a general design method and then apply this design to two special cases: a UV band pass filter based on (ii) Al/Al2O3 stacks as well as (iii) Ag/SiO2 stacks. As an experimental confirmation, we fabricate a UV filter with three Ag/SiO2 layer pairs on a fused silica substrate (iCorning 7980), targeting a central wavelength of 320 nm. A measurement at the peak wavelength shows transmission efficiency as high as 67% in our filter. (C) 2013 AIP Publishing LLC.
引用
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页数:3
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