128x128 and 384x288 HgCdTe staring focal plane arrays

被引：1

作者：

Bovina, LA ^{[1
]}

Boltar, KO ^{[1
]}

Bourlakov, ID ^{[1
]}

Golovin, SV ^{[1
]}

Ivanov, VY ^{[1
]}

Saginov, LD ^{[1
]}

Stafeev, VI ^{[1
]}

Akimov, VM ^{[1
]}

Klimanov, EA ^{[1
]}

Lakeenkov, VM ^{[1
]}

Sidorov, YG ^{[1
]}

机构：

[1] State Sci Ctr Russian Federat RD&P Ctr ORION, Moscow, Russia

来源：

INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES | 1999年 / 3819卷

关键词：

focal plane array; HgCdTe; photovoltaic; IR detectors; staring arrays;

D O I：

10.1117/12.350892

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LWIR staring 128x128 and 384x288 focal plane arrays (FPA) have been developed and investigated. FPAs have been manufactured on the base of mercury cadmium telluride epitaxial layers grown both by liquid phase epitaxy and molecular beam epitaxy. The photodiode array was bonded via the indium bumps to the silicon MOS-multiplexer, which ensure reading, integration and output of the photosignals from the focal plane. Performances of FPAs produced by these different epitaxial methods are analyzed.

引用

页码：9 / 15

页数：7

共 6 条

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