Gain dynamics and saturation property of a semiconductor optical amplifier with a carrier reservoir

被引：28
作者：
Sun, H [1 ]
Wang, Q
Dong, H
Zhu, G
Dutta, NK
Jaques, J
机构：
[1] Univ Connecticut, Dept Phys, Storrs, CT 06269 USA
[2] Lucent Technol, Murray Hill, NJ 07866 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 1-4期
关键词：
semiconductor optical amplifiers (SOAs); semiconductor process modeling;
D O I：
10.1109/LPT.2005.860040
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A model is used to analyze the gain and phase dynamics of a semiconductor optical amplifier with a carrier reservoir (CR-SOA). Coupled rate equations are solved numerically. Due to the fast transition of carriers from the carrier reservoir layer to the active region, the CR-SOA is shown to have faster gain and phase response than a regular SOA. Increasing the injection current will also decrease the response times.
引用
收藏
页码：196 / 198
页数：3
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