Photoreduced nanocomposites of graphene oxide/N-doped carbon dots toward all-carbon memristive synapses

被引:61
作者
Lin, Ya [1 ,2 ]
Wang, Zhongqiang [1 ,2 ]
Zhang, Xue [1 ,2 ]
Zeng, Tao [1 ,2 ]
Bai, Liang [3 ]
Kang, Zhenhui [3 ]
Wang, Changhua [1 ,2 ]
Zhao, Xiaoning [1 ,2 ]
Xu, Haiyang [1 ,2 ]
Liu, Yichun [1 ,2 ]
机构
[1] Northeast Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, 5268 Renmin St, Changchun, Peoples R China
[2] Northeast Normal Univ, Minist Educ, Key Lab UV Light Emitting Mat & Technol, 5268 Renmin St, Changchun, Peoples R China
[3] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou, Peoples R China
基金
中国博士后科学基金;
关键词
MEMORY; REDUCTION; DEVICES; IMPLEMENTATION; CONDUCTIVITY; MECHANISMS; PLASTICITY; FILMS;
D O I
10.1038/s41427-020-00245-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An all-carbon memristive synapse is highly desirable for hardware implementation in future wearable neuromorphic computing systems. Graphene oxide (GO) can exhibit resistive switching (RS) and may be a feasible candidate to achieve this objective. However, the digital-type RS often occurring in GO-based memristors restricts the biorealistic emulation of synaptic functions. Here, an all-carbon memristive synapse with analog-type RS behavior was demonstrated through photoreduction of GO and N-doped carbon quantum dot (NCQD) nanocomposites. Ultraviolet light irradiation induced the local reduction of GO near the NCQDs, therefore forming multiple weak conductive filaments and demonstrating analog RS with a continuous conductance change. This analog RS enabled the close emulation of several essential synaptic plasticity behaviors; more importantly, the high linearity of the conductance change also facilitated the implementation of pattern recognition with high accuracy. Furthermore, the all-carbon memristive synapse can be transferred onto diverse substrates, showing good flexibility and 3D conformality. Memristive potentiation/depression was stably performed at 450 K, indicating the resistance of the synapse to high temperature. The photoreduction method provides a new path for the fabrication of all-carbon memristive synapses, which supports the development of wearable neuromorphic electronics.
引用
收藏
页数:11
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