Diagnostics of heterostructures of resonant-tunneling diodes during epitaxial growth. I. Estimation of the required accuracy of heterostructure growth

被引：1

作者：

Kazakov, I. P. ^{[1
]}

Bazalevskii, M. A. ^{[1
]}

Kapaev, V. V. ^{[1
]}

Tsekhosh, V. I. ^{[1
]}

机构：

[1] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2012年 / 39卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

resonant-tunneling diode; heterostructure; current-voltage characteristic; numerical simulation; monolayer accuracy;

D O I：

10.3103/S1068335612100028

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on the solution to the one-electron Schrodinger equation, current-voltage characteristics of the resonant-tunneling diode based on GaAs/AlAs are numerically simulated. It is shown that the layer thickness accuracy during epitaxial growth of the diode active region should be no worse than one monolayer.

引用

页码：284 / 288

页数：5

共 3 条

[1] Diagnostics of heterostructures of resonant-tunneling diodes during epitaxial growth. I. Estimation of the required accuracy of heterostructure growth
I. P. Kazakov
M. A. Bazalevskii
V. V. Kapaev
V. I. Tsekhosh
Bulletin of the Lebedev Physics Institute, 2012, 39 : 284 - 288
[2] Diagnostics of heterostructures of resonant-tunneling diodes during epitaxial growth. II. Monitoring techniques based on reflection method
Kazakov, I. P.
Bazalevskii, M. A.
Kapaev, V. V.
Tsekhosh, V. I.
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2013, 40 (03) : 68 - 73
[3] Diagnostics of heterostructures of resonant-tunneling diodes during epitaxial growth. II. Monitoring techniques based on reflection method
I. P. Kazakov
M. A. Bazalevskii
V. V. Kapaev
V. I. Tsekhosh
Bulletin of the Lebedev Physics Institute, 2013, 40 : 68 - 73

← 1 →