Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon

被引：1

作者：

Hrauda, N. ^{[1
]}

Zhang, J. J. ^{[1
]}

Groiss, H. ^{[1
]}

Gerharz, J. C. ^{[2
,3
]}

Etzelstorfer, T. ^{[1
]}

Stangl, J. ^{[1
]}

Holy, V. ^{[4
]}

Deiter, C. ^{[5
]}

Seeck, O. H. ^{[5
]}

Bauer, G. ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Semicond Phys, A-4040 Linz, Austria

[2] Forschungszentrum Julich, Peter Grunberg Inst PGI 9 9, D-52425 Julich, Germany

[3] Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany

[4] Charles Univ Prague, Fac Math & Phys, CR-12116 Prague, Czech Republic

[5] Deutsch Elekt Synchrotron DESY, D-22607 Hamburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 03期

基金：

奥地利科学基金会;

关键词：

MOBILITY; ISLANDS; DEVICES; DOTS;

D O I：

10.1063/1.4789507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at 720 degrees C with average Ge contents of 30%, the Si cap layer is misfit-and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789507]

引用

页数：4

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