Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon

被引：1

作者：

Hrauda, N. ^{[1
]}

Zhang, J. J. ^{[1
]}

Groiss, H. ^{[1
]}

Gerharz, J. C. ^{[2
,3
]}

Etzelstorfer, T. ^{[1
]}

Stangl, J. ^{[1
]}

Holy, V. ^{[4
]}

Deiter, C. ^{[5
]}

Seeck, O. H. ^{[5
]}

Bauer, G. ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Semicond Phys, A-4040 Linz, Austria

[2] Forschungszentrum Julich, Peter Grunberg Inst PGI 9 9, D-52425 Julich, Germany

[3] Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany

[4] Charles Univ Prague, Fac Math & Phys, CR-12116 Prague, Czech Republic

[5] Deutsch Elekt Synchrotron DESY, D-22607 Hamburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 03期

基金：

奥地利科学基金会;

关键词：

MOBILITY; ISLANDS; DEVICES; DOTS;

D O I：

10.1063/1.4789507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at 720 degrees C with average Ge contents of 30%, the Si cap layer is misfit-and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789507]

引用

页数：4

共 24 条

[1] Initial stage of the two-dimensional to three-dimensional transition of a strained SiGe layer on a pit-patterned Si(001) template [J].

Chen, Gang ;

Lichtenberger, H. ;

Bauer, G. ;

Jantsch, W. ;

Schaeffler, F. .

PHYSICAL REVIEW B, 2006, 74 (03)

[2]

Chuang S. L., 2009, PHYS PHOTONIC DEVICE, P840

[3] The disposable Dot FET: A strained silicon channel on top of removed SiGe [J].

Gerharz, J. ;

Mussler, G. ;

Moers, J. ;

Rinke, G. ;

Trellenkamp, St. ;

Gruetzmacher, D. .

ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON, 2009, :177-+

[4] Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space [J].

Hrauda, N. ;

Zhang, J. J. ;

Sueess, M. J. ;

Wintersberger, E. ;

Holy, V. ;

Stangl, J. ;

Deiter, C. ;

Seeck, O. H. ;

Bauer, G. .

NANOTECHNOLOGY, 2012, 23 (46)

[5] X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility [J].

Hrauda, N. ;

Zhang, J. J. ;

Stangl, J. ;

Rehman-Khan, A. ;

Bauer, G. ;

Stoffel, M. ;

Schmidt, O. G. ;

Jovanovich, V. ;

Nanver, L. K. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (02) :912-918

[6] X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor [J].

Hrauda, Nina ;

Zhang, Jianjun ;

Wintersberger, Eugen ;

Etzelstorfer, Tanja ;

Mandl, Bernhard ;

Stangl, Julian ;

Carbone, Dina ;

Holy, Vaclav ;

Jovanovic, Vladimir ;

Biasotto, Cleber ;

Nanver, Lis K. ;

Moers, Juergen ;

Gruetzmacher, Detlev ;

Bauer, Guenther .

NANO LETTERS, 2011, 11 (07) :2875-2880

[7] Siticon device scaling to the sub-10-nm regime [J].

Leong, M ;

Doris, B ;

Kedzierski, J ;

Rim, K ;

Yang, M .

SCIENCE, 2004, 306 (5704) :2057-2060

[8] n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility [J].

Jovanovic, V. ;

Biasotto, C. ;

Nanver, L. K. ;

Moers, J. ;

Gruetzmacher, D. ;

Gerharz, J. ;

Mussler, G. ;

van der Cingel, J. ;

Zhang, J. J. ;

Bauer, G. ;

Schmidt, O. G. ;

Miglio, L. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (10) :1083-1085

[9] Strain distribution in a transistor using self-assembled SiGe islands in source and drain regions [J].

Kar, G. S. ;

Kiravittaya, S. ;

Denker, U. ;

Nguyen, B. -Y. ;

Schmidt, O. G. .

APPLIED PHYSICS LETTERS, 2006, 88 (25)

[10] SURFACE ORIENTATION AND STACKING-FAULT GENERATION IN STRAINED EPITAXIAL-GROWTH [J].

KVAM, EP ;

HULL, R .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7407-7411

← 1 2 3 →