The first-principle calculation of electronic structure and optical properties of In2O3

被引:0
作者
Zhang Fu-Chun [1 ,2 ]
Zhang Zhi-Yong [1 ,3 ]
Zhang Wei-Hu [1 ,2 ]
Yan Jun-Feng [3 ]
Yun Jiang-Ni [3 ]
机构
[1] Chinese Acad Sci, Xian Inst Opt & Precis Mech, Xian 710068, Peoples R China
[2] Yanan Univ, Coll Phys & Elect Informat, Yanan 716000, Peoples R China
[3] NW Univ Xian, Informat Sci & Technol Inst, Xian 710127, Peoples R China
关键词
In2O3; optical property; electronic structure; the first-principle;
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The electronic structures and the optical response functions of IN2O3 were calculated by using a first-principle ultra-soft pseudo-potential approach of the plane wave based upon density functional theory, and the relationships between the electronic structures and optical properties were investigated. The dielectric functions, reflectance spectra, energy-loss function Im dominated by electron inter-band transitions were analyzed in terms of the precisely calculated band structure and density of state. The properties of chemistry and physics were studied by the difference charge density. The calculated results indicate that the optical transmittance of In2O3 is higher than 85% in the visible region, and transparent conductive oxide thin films can be prepared. Furthermore, the calculated conclusions offer theoretical data for the design and application of optoelectronics materials of In2O3, and also enable more precise monitoring and controlling during the growth of In2O3 materials to be possible.
引用
收藏
页码:1863 / 1868
页数:6
相关论文
共 19 条
[1]   Electrical, optical, and structural properties of tin-doped In2O3-M2O3 solid solutions (M = Y, Sc) [J].
Ambrosini, A ;
Duarte, A ;
Poeppelmeier, KR ;
Lane, M ;
Kannewurf, CR ;
Mason, TO .
JOURNAL OF SOLID STATE CHEMISTRY, 2000, 153 (01) :41-47
[2]   Indium tin oxide plasma frequency dependence on sheet resistance and surface adlayers determined by reflectance FTIR spectroscopy [J].
Brewer, SH ;
Franzen, S .
JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (50) :12986-12992
[3]   Fabrication and characterization of In2O3 nanowires [J].
Dai, L ;
Chen, XL ;
Jian, JK ;
He, M ;
Zhou, T ;
Hu, BQ .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 75 (06) :687-689
[4]   X-RAY PHOTOEMISSION SPECTROSCOPY STUDIES OF SN-DOPED INDIUM-OXIDE FILMS [J].
FAN, JCC ;
GOODENOUGH, JB .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3524-3531
[5]   BAND-GAP WIDENING IN HEAVILY SN-DOPED IN2O3 [J].
HAMBERG, I ;
GRANQVIST, CG ;
BERGGREN, KF ;
SERNELIUS, BE ;
ENGSTROM, L .
PHYSICAL REVIEW B, 1984, 30 (06) :3240-3249
[6]  
HAMBERG I, 1984, THESIS CHALMERS U TE
[7]   PLASMON EXCITATION-ENERGIES IN ZNO, CDO, AND MGO [J].
HENGEHOLD, RL ;
PEDROTTI, FL .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) :287-291
[8]   INHOMOGENEOUS ELECTRON-GAS [J].
RAJAGOPAL, AK ;
CALLAWAY, J .
PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919
[9]   Phase stability, electronic structure, and optical properties of indium oxide polytypes [J].
Karazhanov, S. Zh. ;
Ravindran, P. ;
Vajeeston, P. ;
Ulyashin, A. ;
Finstad, T. G. ;
Fjellvag, H. .
PHYSICAL REVIEW B, 2007, 76 (07)
[10]   Effect of thin iridium oxide on the formation of interface dipole in organic light-emitting diodes [J].
Kim, SY ;
Lee, JL .
APPLIED PHYSICS LETTERS, 2005, 87 (23) :1-3