Polarization fields in wurtzite strained layers grown on (hkl) planes

被引：7

作者：

Gil, Bernard ^{[1
]}

Bigenwald, Pierre ^{[2
]}

Briota, Olivier ^{[1
]}

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier 5, France

[2] Clermont Univ, LASMEA, F-63177 Aubiere, France

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2008年 / 44卷 / 03期

关键词：

semiconductors; nitrides; epitaxy; structural properties; elastic properties; electro-optical effects;

D O I：

10.1016/j.spmi.2008.06.003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We calculate spontaneous and piezoelectric polarization fields in wurtzite crystals via the utilization of crystallography considerations, and elasticity theory. As an application of it, we derive equations appropriate to GaN-Ga(1-x)ln(x)N quantum wells, heterostructures res that have impact in realizing blue light emitting solid state devices, grown on (hkl) planes. We show that some specific crystal orientations lead to a cancelation of the Quantum Confined Stark Effect in such heterostructures, whilst other orientations lead to a reduction of the density of elastic energy stored in the Ga(1-x)ln(x)N layers. This imposes a compromise for device designers, if it is to improve the light emission efficiency of the related devices. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：291 / 301

页数：11

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