Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire

被引:216
作者
Mezzadri, Francesco [1 ,2 ]
Calestani, Gianluca [1 ]
Boschi, Francesco [2 ,3 ]
Delmonte, Davide [2 ]
Bosi, Matteo [2 ]
Fornari, Roberto [2 ,3 ]
机构
[1] Univ Parma, Dept Chem, Parco Area Sci 17-A, I-43124 Parma, Italy
[2] CNR, IMEM, Parco Area Sci 37-A, I-43124 Parma, Italy
[3] Univ Parma, Dept Phys & Earth Sci, Parco Area Sci 7-A, I-43124 Parma, Italy
关键词
BETA-GA2O3; SINGLE-CRYSTALS; GALLIUM OXIDE; THIN-FILMS; LAYERS;
D O I
10.1021/acs.inorgchem.6b02244
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The crystal structure and ferroelectric properties of epsilon-Ga2O3 deposited by low-temperature MOCVD on (0001) sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga2O3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6(3)mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c-oriented sapphire substrate, with the Ga2O3 [10-10] direction being parallel to the Al2O3 direction [11-20], yielding a lattice mismatch of about 4.1%.
引用
收藏
页码:12079 / 12084
页数:6
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