Recent developments in low fired X7R dielectrics

被引:0
作者
Maher, GH [1 ]
Hatzenbuhler, RW [1 ]
Bheemineni, V [1 ]
机构
[1] MRA Labs Inc, N Adams, MA 01247 USA
来源
MULTILAYER ELECTRONIC CERAMIC DEVICES | 1999年 / 97卷
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have previously reported on the properties of a low fired BaTiO3, base X7R material with a dielectric constant "K" greater than 4500, that required annealing after sintering to improve the insulation resistance at elevated voltage and temperature. The newly developed material with similar physical and electrical properties does not require annealing, thus simplifying the production process. Using this type dielectric, the properties of multilayer ceramic capacitors (MLC), with active layer thickness of about 6 microns for high capacitance chips and layer thickness between 15 and 30 microns for high voltage application, will be presented.
引用
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页码:17 / 28
页数:12
相关论文
共 4 条
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CHEN ZC, 1998, INT S MULT EL CER DE
[2]  
MAHER GH, CERAMIC T, V88, P433
[3]  
MAHER GH, 1997, 17 CAP RES TECHN S
[4]  
SAKABE Y, 1998, INT S MULT EL CER DE