AgSbSe2 thin films for photovoltaic structures produced through reaction of chemically deposited selenium thin films with Ag and Sb2S3

被引：0

作者：

Bindu, K ^{[1
]}

Nair, MTS ^{[1
]}

Nair, PK ^{[1
]}

机构：

[1] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Temixco 62580, Morelos, Mexico

来源：

Materials for Photovoltaics | 2005年 / 836卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Selenium thin films (350 nm) deposited from a 0.01 M solution of Na2SeSO3 Of pH 4.5 maintained at 10 degrees C for 13 h, have been used as a source of selenium vapour for reaction with vacuum deposited Ag thin film on chemically deposited Sb2S3+Ag layers. When a stack of Sb2S3+Ag is heated in contact with Se film, AgSbSe2 is formed through solid state reaction of Sb2S3 and Ag2Se. The latter is formed at 80 degrees C through the reaction of Ag-film in Se-vapour. This thin film is photoconductive and p-type. The optical band gap is nearly 1 eV and dark conductivity, 10(-3) Omega(-1)cm(-1). This thin film has been incorporated to form a photovoltaic structure, SnO2:F-(n)CdS:In-(1)Sb2S3-(p)AgSbSe2-silver print. V-oc> 400 mV and J(sc)> 12 mA/cm(2) have been observed in this under an illumination intensity of 1 kWm(-2).

引用

页码：173 / 178

页数：6

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