Potential and limitations of electron holography in silicon research

被引：4

作者：

Formanek, P ^{[1
]}

Kittler, M ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI | 2005年 / 108-109卷

关键词：

electron holography; dopant profiling; semiconductor devices; crystal defects;

D O I：

10.4028/www.scientific.net/SSP.108-109.603

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on electron holography as a promising candidate for diagnostics in silicon technology and research. Electron holography determines the local phase shift of the electron wave passing through a sample. The phase is proportional to the 2D projected electrostatic potential in the sample and thus reveals p-n junctions and, indirectly, doping. We demonstrate detection of submonolayer boron layers in Si and SiGe, measurement of Ge concentration in SiGe and qualitative 2D oxygen mapping in SiO2/Si structures with 0.5 nm resolution, and comparison of doping in two bipolar transistors with different base implant. Resolution and noise limits are discussed.

引用

页码：603 / 608

页数：6

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