Inelastic electron scattering cross-section spectroscopy of Ge x Si1-x nanoheterostructures

被引：5

作者：

Parshin, A. S. ^{[1
]}

P'yanovskaya, E. P. ^{[1
]}

Pchelyakov, O. P. ^{[2
]}

Mikhlin, Yu. L. ^{[3
]}

Nikiforov, A. I. ^{[2
]}

Timofeev, V. A. ^{[2
]}

Esin, M. Yu. ^{[1
]}

机构：

[1] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia

[2] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[3] Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 660036, Russia

来源：

SEMICONDUCTORS | 2014年 / 48卷 / 02期

关键词：

QUANTUM DOTS; THIN-FILMS; SPECTRA; GROWTH; LAYER;

D O I：

10.1134/S1063782614020225

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Two-component Ge (x) Si1 - x (0 a parts per thousand currency sign x a parts per thousand currency sign 1) structures are studied by electron spectroscopy. The atomic composition of the structures is determined from X-ray photoelectron spectroscopy data. The reflection electron-energy-loss spectra for a series of samples with different x at primary-electron energies from 200 to 3000 eV are recorded. Using the experimental spectra, the electron energy loss dependences of the product of the electron inelastic mean free path and the differential inelastic electron scattering cross section are calculated. It is shown that the quantitative characteristics of these dependences can be used to determine the atomic concentrations of elements in the investigated system.

引用

页码：224 / 227

页数：4

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