Evaluation of Transmission Line and Ring Oscillator Interconnect Model for IC Applications

被引：0

作者：

Yadav, Ajeet Kumar ^{[1
]}

Rahul ^{[1
]}

Rizvi, Navaid Z. ^{[1
]}

机构：

[1] Gautam Buddha Univ, Sch Informat & Commun Technol, Greater Noida 201308, India

来源：

2016 INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS, AND OPTIMIZATION TECHNIQUES (ICEEOT) | 2016年

关键词：

Hot Carrier Injection (HCI); Negative biasing temperature instabilty (NBTI); Postive biasing temperature instabilty (PBTI); Time-dependent dielectric breakdown (TDDB);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ability of an item to perform a required function under stated conditions for a specified period of time. The main objective of this work is to analyze and estimate the reliability of a transmission line and thirteen stage ring oscillator as interconnects using GPDK 45 nm CMOS technology. As we know that reliability basically depends on HCI NBTI, PBTI and TDDB. Basically in this paper for the performance analysis we have analyzed the results in terms of transient response, delivered power by every component and noise analysis on different incident of time. In this work the reliability factors are done by comparing power, delay and output voltage after a specific amount of time.

引用

页码：4245 / 4249

页数：5

共 8 条

[1]

Cheng C., 2000, INTERCONNECT ANAL SY

[2]

Issue Pavel Livshits, 2011, IEEE T DEVICE MAT RE, V11

[3]

Kim TT, 2012, IEEE INT SYMP CIRC S, P1580

[4]

Kumar Sushil, 2012, INT J VLSI DESIGN CO

[5] A novel model on phase noise of ring oscillator based on last passage time [J].

Leung, BH .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2004, 51 (03) :471-482

[6]

Li Hong, 2008, T ELECT DEVICES, V55

[7]

Okada Kenichi, ESTIMATION POWER RED

[8]

Rizvi Navaid Zafar, 2015, ICTACT 2015

← 1 →