High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector

被引：7

作者：

Jiang, Zhi ^{[1
,2
]}

Sun, Yao-Yao ^{[1
,2
]}

Guo, Chun-Yan ^{[1
,2
]}

Lv, Yue-Xi ^{[1
,2
]}

Hao, Hong-Yue ^{[1
,2
]}

Jiang, Dong-Wei ^{[1
,2
]}

Wang, Guo-Wei ^{[1
,2
]}

Xu, Ying-Qiang ^{[1
,2
]}

Niu, Zhi-Chuan ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

来源：

CHINESE PHYSICS B | 2019年 / 28卷 / 03期

关键词：

infrared detector; InAs/GaSb superlattice; dual-color; molecular beam epitaxy;

D O I：

10.1088/1674-1056/28/3/038504

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A long-/long-wave dual-color detector with N-M-pi-B-pi-M-N structure was developed based on a type-II InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1 (blue channel) and long-wavelength infrared band-2 (red channel) were 44% at 6.3 mu m under 20 mV and 57% at 9.1 mu m under -60 mV, respectively. The optical performance for each channel was achieved using a 2 mu m thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached 5.0 x 10(11) cm.Hz(1/2)/W at 6.8 mu m and 3.1 x 10(11) cm.Hz(1/2)/W at 9.1 mu m, respectively, at 77 K.

引用

页数：5

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