Realization of p-type Se-N co-doped ZnO films by radio-frequency magnetron sputtering

被引：10

作者：

Cai, Hui ^{[1
]}

Xu, Hongbin ^{[1
]}

Ye, Zhizhen ^{[1
]}

Huang, Jingyun ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

MATERIALS LETTERS | 2013年 / 108卷

关键词：

ZnOSe; Thin film; Doping; p-type conductivity;

D O I：

10.1016/j.matlet.2013.07.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Se-N co-doped ZnO films are fabricated by radio-frequency magnetron sputtering. p-type Conductivity of the co-doped films with a hole concentration of 1.14 x 10(16) cm(-3) is realized after rapid thermal annealing, while the film without Se grown and annealed at the same condition shows n-type conductivity. The Se incorporation may enhance the solubility of No and make the No level shallower. Optical band gap is reduced due to Se incorporation. X-ray photoelectron spectroscopy measurements show that both Se and N take the place of O and N-Zn-Se bonding may be formed. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：183 / 185

页数：3

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