Evaluation of GaN substrates grown in supercritical basic ammonia

被引：5

作者：

Saito, Makoto ^{[1
]}

Yamada, Hisashi ^{[1
]}

Iso, Kenji ^{[1
]}

Sato, Hitoshi ^{[1
]}

Hirasawa, Hirohiko ^{[1
]}

Kamber, Derrick S. ^{[1
]}

Hashimoto, Tadao ^{[1
]}

DenBaars, Steven P. ^{[1
]}

Speck, James S. ^{[1
]}

Nakamura, Shuji ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 05期

关键词：

crystal growth from solution; diffusion; gallium compounds; III-V semiconductors; light emitting diodes; MOCVD; MOCVD coatings; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; substrates; wide band gap semiconductors; X-ray diffraction; LIGHT-EMITTING-DIODES; QUANTUM-WELLS; EMISSION; CRYSTALS; SINGLE;

D O I：

10.1063/1.3079813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN crystals grown by the basic ammonothermal method were investigated for their use as substrates for device regrowth. X-ray diffraction analysis indicated that the substrates contained multiple grains while secondary ion mass spectroscopy (SIMS) revealed a high concentration of hydrogen, oxygen, and sodium. Despite these drawbacks, the emission from the light emitting diode structures grown by metal organic chemical vapor deposition on both the c-plane and m-plane epitaxial wafers was demonstrated. The SIMS depth profiles showed that the diffusion of the alkali metal from the substrate into the epitaxial film was small, especially in the m-direction.

引用

页数：3

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