Magnetic Properties in Nonmagnetic Metal Atom Adsorption on SiC Monolayer: First-Principles Study

被引:10
作者
Luo, M. [1 ]
Yin, H. H. [2 ]
Shen, Y. H. [3 ]
机构
[1] Shanghai Second Polytech Univ, Dept Phys, Shanghai 201209, Peoples R China
[2] Fudan Univ, Dept Elect Engn, Shanghai 200433, Peoples R China
[3] East China Normal Univ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
关键词
SiC; Nonmagnetic metals; Adsorption; Electronic structure; DFT calculations; PHOSPHORENE;
D O I
10.1007/s10948-017-4310-3
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structural, electronic, and magnetic properties of adsorbed SiC monolayer with a series of nonmagnetic metal atoms, including Al, Ga, Li, Mg, and Na, are systematically investigated using first-principles calculations. Magnetic behavior shows in the Al-, Ga-, Li-, and Na-adsorbed systems, and both nonmagnetic metals and their neighboring Si/C atoms contribute to the magnetism. Meanwhile, due the most stable structure of Al-adsorbed SiC monolayer, we investigated the magnetic interaction between two Al atoms. A long-range antiferromagnetic (AFM) is always observed as the Al-Al distance increases. Our results show that the two-Al-adsorbed 2D SiC exhibits an AFM order due to the p-p hybridization mechanism.
引用
收藏
页码:1235 / 1240
页数:6
相关论文
共 24 条
[1]   First principles many-body calculations of electronic structure and optical properties of SiC nanoribbons [J].
Alaal, Naresh ;
Loganathan, Vaideesh ;
Medhekar, Nikhil ;
Shukla, Alok .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (10)
[2]   Anionogenic ferromagnets [J].
Attema, JJ ;
de Wijs, GA ;
Blake, GR ;
de Groot, RA .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (46) :16325-16328
[3]   Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review [J].
Casady, JB ;
Johnson, RW .
SOLID-STATE ELECTRONICS, 1996, 39 (10) :1409-1422
[4]   The electronic properties of graphene [J].
Castro Neto, A. H. ;
Guinea, F. ;
Peres, N. M. R. ;
Novoselov, K. S. ;
Geim, A. K. .
REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162
[5]   Atomistic simulation of the electronic states of adatoms in monolayer MoS2 [J].
Chang, Jiwon ;
Larentis, Stefano ;
Tutuc, Emanuel ;
Register, Leonard F. ;
Banerjee, Sanjay K. .
APPLIED PHYSICS LETTERS, 2014, 104 (14)
[6]   Defect-induced intrinsic magnetism in wide-gap III nitrides [J].
Dev, Pratibha ;
Xue, Yu ;
Zhang, Peihong .
PHYSICAL REVIEW LETTERS, 2008, 100 (11)
[7]   Structural, Electronic, and Magnetic Properties of Adatom Adsorptions on Black and Blue Phosphorene: A First-Principles Study [J].
Ding, Yi ;
Wang, Yanli .
JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (19) :10610-10622
[8]   Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene [J].
Fei, Ruixiang ;
Faghaninia, Alireza ;
Soklaski, Ryan ;
Yan, Jia-An ;
Lo, Cynthia ;
Yang, Li .
NANO LETTERS, 2014, 14 (11) :6393-6399
[9]   Graphene: Status and Prospects [J].
Geim, A. K. .
SCIENCE, 2009, 324 (5934) :1530-1534
[10]   Transition Metal Doped Phosphorene: First-Principles Study [J].
Hashmi, Arqum ;
Hong, Jisang .
JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (17) :9198-9204