Secondary ion mass spectroscopy and photoluminescence investigations on the GaN epilayer grown on Si substrate

被引：7

作者：

Zhang, HX ^{[1
]}

Lu, HM ^{[1
]}

Ye, ZZ ^{[1
]}

Zhao, BH ^{[1
]}

Wang, L ^{[1
]}

Que, DL ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

ACTA PHYSICA SINICA | 1999年 / 48卷 / 07期

关键词：

D O I：

10.7498/aps.48.1315

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

in this paper, the growth GaN epilayer on the Si substrate by a novel vacuum reaction method rather than metal-organic chemical vapor deposition and molecular beam epitaxy is reported. The effects of growth temperature and annealing process on the photoluminescence (PL) of GaN epilayer were investigated. Annealing could weaken the PL and the GaN epilayer grown at 1050 degrees C exhibited the strongest FL. It was demonstrated in secondary ion mass spectroscopy that both gallium and nitrogen were distributed uniformly within the epilayer, while gallium was segregated on the surface of epilayer. The high carrier concentration (1.7 x 10(18)/cm(3)) was associated with the impurities of silicon and oxygen and native defects existing in the epilayer. In-situ cleaning was proved to be efficient for the removal of oxygen on the silicon substrate.

引用

页码：1315 / 1319

页数：5