Giant Electroresistance of Super-tetragonal BiFeO3-Based Ferroelectric Tunnel Junctions

被引：246

作者：

Yamada, Hiroyuki ^{[1
,2
,3
]}

Garcia, Vincent ^{[1
,2
]}

Fusil, Stephane ^{[1
,2
,4
]}

Boyn, Soeren ^{[1
,2
]}

Marinova, Maya ^{[5
]}

Gloter, Alexandre ^{[5
]}

Xavier, Stephane ^{[6
]}

Grollier, Julie ^{[1
,2
]}

Jacquet, Eric ^{[1
,2
]}

Carretero, Cecile ^{[1
,2
]}

Deranlot, Cyrile ^{[1
,2
]}

Bibes, Manuel ^{[1
,2
]}

Barthelemy, Agnes ^{[1
,2
]}

机构：

[1] Unite Mixte Phys CNRS Thales, F-91767 Palaiseau, France

[2] Univ Paris 11, F-91405 Orsay, France

[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan

[4] Univ Evry Val Essonne, F-91025 Evry, France

[5] Univ Paris 11, CNRS, UMR 8502, Phys Solides Lab, F-91405 Orsay, France

[6] Thales Res & Technol, F-91767 Palaiseau, France

来源：

ACS NANO | 2013年 / 7卷 / 06期

基金：

欧洲研究理事会;

关键词：

ferroelectric tunnel junctions; nanoscale ferroelectrics; tunnel electroresistance; bismuth ferrite; piezoresponse force microscopy; MEMRISTOR; POLARIZATION; FILMS;

D O I：

10.1021/nn401378t

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest In nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains In the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

引用

页码：5385 / 5390

页数：6

共 29 条

[1] Evidence for Room-Temperature Multiferroicity in a Compound with a Giant Axial Ratio
Bea, H.
Dupe, B.
Fusil, S.
Mattana, R.
Jacquet, E.
Warot-Fonrose, B.
Wilhelm, F.
Rogalev, A.
Petit, S.
Cros, V.
Anane, A.
Petroff, F.
Bouzehouane, K.
Geneste, G.
Dkhil, B.
Lisenkov, S.
Ponomareva, I.
Bellaiche, L.
Bibes, M.
Barthelemy, A.
[J]. PHYSICAL REVIEW LETTERS, 2009, 102 (21)
[2] Chanthbouala A, 2012, NAT MATER, V11, P860, DOI [10.1038/nmat3415, 10.1038/NMAT3415]
[3] Chanthbouala A, 2012, NAT NANOTECHNOL, V7, P101, DOI [10.1038/nnano.2011.213, 10.1038/NNANO.2011.213]
[4] MEMRISTOR - MISSING CIRCUIT ELEMENT
CHUA, LO
[J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1971, CT18 (05): : 507 - +
[5] Competing phases in BiFeO3 thin films under compressive epitaxial strain
Dupe, B.
Infante, I. C.
Geneste, G.
Janolin, P. -E.
Bibes, M.
Barthelemy, A.
Lisenkov, S.
Bellaiche, L.
Ravy, S.
Dkhil, B.
[J]. PHYSICAL REVIEW B, 2010, 81 (14)
[6] Effect of epitaxial strain on the spontaneous polarization of thin film ferroelectrics
Ederer, C
Spaldin, NA
[J]. PHYSICAL REVIEW LETTERS, 2005, 95 (25)
[7] Conduction through 71° DomainWalls in BiFeO3 Thin Films
Farokhipoor, S.
Noheda, B.
[J]. PHYSICAL REVIEW LETTERS, 2011, 107 (12)
[8] Nanoscale ferroelectric tunnel junctions based on ultrathin BaTiO3 film and Ag nanoelectrodes
Gao, X. S.
Liu, J. M.
Au, K.
Dai, J. Y.
[J]. APPLIED PHYSICS LETTERS, 2012, 101 (14)
[9] Giant tunnel electroresistance for non-destructive readout of ferroelectric states
Garcia, V.
Fusil, S.
Bouzehouane, K.
Enouz-Vedrenne, S.
Mathur, N. D.
Barthelemy, A.
Bibes, M.
[J]. NATURE, 2009, 460 (7251) : 81 - 84
[10] Direct studies of domain switching dynamics in thin film ferroelectric capacitors
Gruverman, A
Rodriguez, BJ
Dehoff, C
Waldrep, JD
Kingon, AI
Nemanich, RJ
Cross, JS
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (08)

← 1 2 3 →