Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

被引：81

作者：

Chan, Mei Yin ^{[1
]}

Komatsu, Katsuyoshi ^{[1
]}

Li, Song-Lin ^{[1
]}

Xu, Yong ^{[1
]}

Darmawan, Peter ^{[1
]}

Kuramochi, Hiromi ^{[1
]}

Nakaharai, Shu ^{[2
]}

Aparecido-Ferreira, Alex ^{[1
]}

Watanabe, Kenji ^{[3
]}

Taniguchi, Takashi ^{[3
]}

Tsukagoshi, Kazuhito ^{[1
]}

机构：

[1] Natl Inst Mat Sci, WPI Ctr Mat Nanoarchitechton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Adv Ind Sci & Technol, GNC, Tsukuba, Ibaraki 3058569, Japan

[3] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

NANOSCALE | 2013年 / 5卷 / 20期

关键词：

GRAPHENE; SCATTERING; LAYERS;

D O I：

10.1039/c3nr03220e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices.

引用

页码：9572 / 9576

页数：5

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