Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors

被引：43
作者：
Jang, Kyungsoo [1 ]
Raja, Jayapal [1 ]
Lee, Youn-Jung [1 ]
Kim, Doyoung [2 ]
Yi, Junsin [1 ]
机构：
[1] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon 440746, South Korea
[2] Ulsan Coll, Sch Elect & Elect, Ulsan, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
Carrier concentration; crystallinity; In content; Indium-Tin-Zinc-oxide (ITZO); next-generation displays; thin-film transistor (TFT); ZNO; TFT;
D O I：
10.1109/LED.2013.2272084
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the effects of carrier concentration (N-CH), indium (In) content, and crystallinity (X-c) on the electrical properties of indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs). The ITZO TFT with the lowest N-CH, In content, and amorphous phase at the optimized oxygen flow rate has high field-effect mobility (mu(FE)) of 37.2 cm(2)/V.s, high ON/OFF current ratio (I-ON/I-OFF) of similar to 1 x 10(7), and low subthreshold swing (S.S) of 0.93. With increasing N-CH, In content, and X-c, mu(FE), I-ON/ IOFF, and S.S surprisingly degraded to 14.4 cm(2)/V . s, similar to 4 x 10(4), and 4.01, respectively. Our high ITZO TFTs with mu(FE) of 37.2 cm(2)/V.s, obtained thorough control of the N-CH, In content, and X-c, was suitable for application to next generation ultrahigh resolution displays as well as high frame rate displays.
引用
收藏
页码：1151 / 1153
页数：3
相关论文
共 50 条
[31]   Effect of Chloride Precursors on the Stability of Solution-Processed Indium Zinc Oxide Thin-Film Transistors [J].
Lee, Dong Hee ;
Park, Sung Min ;
Yang, Jung Il ;
Cho, Dong Kyu ;
Woo, Sang Hyun ;
Lim, Yoo Sung ;
Kim, Dae Kuk ;
Yi, Moonsuk .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (10)
[32]   Sputtered Deposited Carbon-Indium-Zinc Oxide Channel Layers for Use in Thin-Film Transistors [J].
Parthiban, Shanmugam ;
Kim, Soo-Hyun ;
Kwon, Jang-Yeon .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (10) :1028-1030
[33]   Circular Architecture for Excellent Uniformity in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors [J].
Zhang, Yanqin ;
Li, Xufan ;
Zhang, Jianwei ;
Yang, Zhenzhong ;
Wang, Jiawei ;
Wang, Lingfei ;
Li, Mengmeng ;
Li, Ling ;
Liu, Ming .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (09) :5421-5424
[34]   Extraction method of trap densities for indium zinc oxide thin-film transistors processed by solution method [J].
Qiang, Lei ;
Liang, Xiaoci ;
Pei, Yanli ;
Yao, Ruohe ;
Wang, Gang .
THIN SOLID FILMS, 2018, 649 :51-56
[35]   Effects of Annealing Temperature on Electrical Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors [J].
Lee, Jeong-Soo ;
Kim, Yong-Jin ;
Lee, Yong-Uk ;
Kim, Yong-Hoon ;
Kwon, Jang-Yeon ;
Han, Min-Koo .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (06)
[36]   Exploratory Combustion Synthesis: Amorphous Indium Yttrium Oxide for Thin-Film Transistors [J].
Hennek, Jonathan W. ;
Kim, Myung-Gil ;
Kanatzidis, Mercouri G. ;
Facchetti, Antonio ;
Marks, Tobin J. .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2012, 134 (23) :9593-9596
[37]   High-Performance Amorphous Zinc-Tin-Oxide Thin-Film Transistors With Low Tin Concentration [J].
Weng, Shufeng ;
Chen, Rongsheng ;
Zhong, Wei ;
Deng, Sunbin ;
Li, Guijun ;
Yeung, Fion Sze Yan ;
Lan, Linfeng ;
Chen, Zhijian ;
Kwok, Hoi-Sing .
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01) :632-637
[38]   Dual Gate Indium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics [J].
Li, Min ;
Zhou, Lei ;
Wu, Weijing ;
Pang, Jiawei ;
Zou, Jianhua ;
Peng, Junbiao ;
Xu, Miao .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (07) :2448-2453
[39]   Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures [J].
Krausmann, Jan ;
Sanctis, Shawn ;
Engstler, Joerg ;
Luysberg, Martina ;
Bruns, Michael ;
Schneider, Joerg J. .
ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (24) :20661-20671
[40]   Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing [J].
Chiu, C. J. ;
Pei, Z. W. ;
Chang, S. T. ;
Chang, S. P. ;
Chang, S. J. .
VACUUM, 2011, 86 (03) :246-249
12345