Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors

被引：43

作者：

Jang, Kyungsoo ^{[1
]}

Raja, Jayapal ^{[1
]}

Lee, Youn-Jung ^{[1
]}

Kim, Doyoung ^{[2
]}

Yi, Junsin ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon 440746, South Korea

[2] Ulsan Coll, Sch Elect & Elect, Ulsan, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

Carrier concentration; crystallinity; In content; Indium-Tin-Zinc-oxide (ITZO); next-generation displays; thin-film transistor (TFT); ZNO; TFT;

D O I：

10.1109/LED.2013.2272084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the effects of carrier concentration (N-CH), indium (In) content, and crystallinity (X-c) on the electrical properties of indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs). The ITZO TFT with the lowest N-CH, In content, and amorphous phase at the optimized oxygen flow rate has high field-effect mobility (mu(FE)) of 37.2 cm(2)/V.s, high ON/OFF current ratio (I-ON/I-OFF) of similar to 1 x 10(7), and low subthreshold swing (S.S) of 0.93. With increasing N-CH, In content, and X-c, mu(FE), I-ON/ IOFF, and S.S surprisingly degraded to 14.4 cm(2)/V . s, similar to 4 x 10(4), and 4.01, respectively. Our high ITZO TFTs with mu(FE) of 37.2 cm(2)/V.s, obtained thorough control of the N-CH, In content, and X-c, was suitable for application to next generation ultrahigh resolution displays as well as high frame rate displays.

引用

页码：1151 / 1153

页数：3

共 13 条

[1] Oxide-TFT technologies for next-generation AMOLED displays [J].

Arai, Toshiaki .

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2012, 20 (03) :156-161

[2] Effect of thickness of ZnO active layer on ZnO-TFT's characteristics [J].

Chung, J. H. ;

Lee, J. Y. ;

Kim, H. S. ;

Jang, N. W. ;

Kim, J. H. .

THIN SOLID FILMS, 2008, 516 (16) :5597-5601

[3] High-mobility oxide TFT for circuit integration of AMOLEDs [J].

Fukumoto, Eri ;

Arai, Toshiaki ;

Morosawa, Narihiro ;

Tokunaga, Kazuhiko ;

Terai, Yasuhiro ;

Fujimori, Takashige ;

Sasaoka, Tatsuya .

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2011, 19 (12) :867-872

[4] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[5] Modeling and simulation of polycrystalline ZnO thin-film transistors [J].

Hossain, FM ;

Nishii, J ;

Takagi, S ;

Ohtomo, A ;

Fukumura, T ;

Fujioka, H ;

Ohno, H ;

Koinuma, H ;

Kawasaki, M .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (12) :7768-7777

[6] Effects of electrical bias stress on the performance of ZnO-based TFTs fabricated by RF magnetron sputtering [J].

Navamathavan, R ;

Yang, EJ ;

Lim, JH ;

Hwang, DK ;

Oh, JY ;

Yang, JH ;

Jang, JH ;

Park, SJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (05) :G385-G388

[7]

Ryu M.K., 2009, APPL PHYS LETT, V95

[8]

Ryu M, 2009, NEW LIVER ANATOMY: PORTAL SEGMENTATION AND THE DRAINAGE VEIN, P17, DOI 10.1007/978-4-431-95993-9_4

[9] About the oxygen diffusion mechanism in ZnO [J].

Sabioni, ACS .

SOLID STATE IONICS, 2004, 170 (1-2) :145-148

[10]

Schroder D. K., 2005, Semiconductor material and device characterization

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