Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001)

被引：92

作者：

Czernohorsky, M

Bugiel, E

Osten, HJ

Fissel, A

Kirfel, O

机构：

[1] Leibniz Univ Hannover, Inst Elect Mat & Devices, D-30167 Hannover, Germany

[2] Leibniz Univ Hannover, Informat Technol Lab, D-30167 Hannover, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 15期

关键词：

D O I：

10.1063/1.2194227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the influence of additional oxygen supply and temperature during the growth of thin Gd2O3 layers on Si(001) with molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly; however, too high oxygen partial pressures lead to an increase in the lower permittivity interfacial layer thickness. The growth temperature mainly influences the dielectric gate stack properties due to changes of the Gd2O3/Si interface structure. Optimized conditions (600 degrees C and p(O2)=5x10(-7) mbar) were found to achieve equivalent oxide thickness values below 1 nm accompanied by leakage current densities below 1 mA/cm(2) at 1 V.

引用

收藏

页数：3

相关论文

共 16 条

[1] The binary rare earth oxides [J].

Adachi, G ;

Imanaka, N .

CHEMICAL REVIEWS, 1998, 98 (04) :1479-1514

[2] Dielectric properties of two phases of crystalline lutetium oxide [J].

Delugas, P ;

Fiorentini, V .

MICROELECTRONICS RELIABILITY, 2005, 45 (5-6) :831-833

[3] Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001):: Application to praseodymium oxide [J].

Fissel, A ;

Osten, HJ ;

Bugiel, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04) :1765-1772

[4]

FISSEL A, UNPUB J APPL PHYS

[5] Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics:: Understanding the processing, structure, and physical and electrical limits [J].

Green, ML ;

Gusev, EP ;

Degraeve, R ;

Garfunkel, EL .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) :2057-2121

[6] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer [J].

Hattori, T ;

Yoshida, T ;

Shiraishi, T ;

Takahashi, K ;

Nohira, H ;

Joumori, S ;

Nakajima, K ;

Suzuki, M ;

Kimura, K ;

Kashiwagi, I ;

Ohshima, C ;

Ohmi, S ;

Iwai, H .

MICROELECTRONIC ENGINEERING, 2004, 72 (1-4) :283-287

[7] Thermodynamic stability of binary oxides in contact with silicon [J].

Hubbard, KJ ;

Schlom, DG .

JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) :2757-2776

[8] High ε gate dielectrics Gd2O3 and Y2O3 for silicon [J].

Kwo, J ;

Hong, M ;

Kortan, AR ;

Queeney, KT ;

Chabal, YJ ;

Mannaerts, JP ;

Boone, T ;

Krajewski, JJ ;

Sergent, AM ;

Rosamilia, JM .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :130-132

[9] Si segregation into Pr2O3 and La2O3 high-k gate oxides -: art. no. 042902 [J].

Lippert, G ;

Daabrowski, J ;

Melnik, V ;

Sorge, R ;

Wenger, C ;

Zaumseil, P ;

Müssig, HJ .

APPLIED PHYSICS LETTERS, 2005, 86 (04) :042902-1

[10] Dielectric properties of Pr2O3 high-k films grown by metalorganic chemical vapor deposition on silicon [J].

Lo Nigro, R ;

Raineri, V ;

Bongiorno, C ;

Toro, R ;

Malandrino, G ;

Fragalá, IL .

APPLIED PHYSICS LETTERS, 2003, 83 (01) :129-131