Fabrication of PIN Devices Including ZnO Quantum Dots

被引：1
|
作者：
Zhang, Xinyu [1 ]
Kobayashi, Kenkichiro [1 ]
机构：
[1] Shizuoka Univ, Fac Engn, Dept Mat Sci, Naka Ku, Hamamatsu, Shizuoka 4328561, Japan
来源：
ELECTROCERAMICS IN JAPAN XV | 2013年 / 566卷
关键词：
PIN devices; ZnO-quantum dots; Ga2ZnO4; films; Ni0.7Zn0.3O films;
D O I：
10.4028/www.scientific.net/KEM.566.191
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Films containing ZnO quantum dots (ZnO QDs) with ca.5 run in size were grown at 125 degrees C by chemical vapor deposition. An emission is seen at a wavelength of 367 nm in photoluminescence spectra of the ZnO QDs, and its intensity is enhanced after the deposition of a Ga2ZnO4 film on the ZnO QDs. Using the films of ZnO QDs, we fabricated PIN devices constructed from In1.8Zn0.2O3 / InGaZnO4 / ZnO QDs / Ga2ZnO4 / Ni0.7Zn0.3O / Ni. The PIN devices exhibit good rectification characteristics.
引用
收藏
页码：191 / 194
页数：4
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